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2P302B

2P302B

Silicone planar field transistor with a p-n gate and n-type channel. Transistors are suitable for wide-band amplifiers with frequencies up to 150 MHz, switching devices and other special purpose equipment.

Case type: metal-glass with flexible terminals, KT-2-12

Technical parameters (at +25 oC)

Maximum allowed power dissipation, mW

300

Maximum frequency, MHz

150

Maximum drain-to-source voltage, V

20

Maximum gate-to-drain voltage, V

20

Maximum gate-to-source voltage, V

10

Maximum drain current, A

43

Cut-off voltage, V

<7

Gate leakage current, nA

<10

Mutual transconductance, mA/V

>7

Drain initial current, mA

18..43

Drain residual current, mA

6

Input capacitance (gate-to-source), pF

<20

Input-to-output capacitance (gate-to-drain), pF

<8

Make time, not more than, ns

4

Release time, not more than, ns

5

Ambient air temperature, oC

-60..+125

You can order 2P302B from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com