Home  /  Products  /  Diodes  /  2D103A1/SO

2D103A1/SO

Epitaxial passivated silicon rectifying diode for use in special-purpose equipment

Diodes are produced in a glass case with platynite pins.

Technical parameters

Leakage currentat backward voltage

75 V

100 V

not more than 1 µA

not more than 10 µA

Forward voltage at forward current 50 mA

not more than 1 V

Steady-state forward voltage at 10 µs time rating and forward current

0.5 A

2 A

not more than 1.5 V

not more than 2.5 V

Impulse-state forward voltage at 10 µs time rating and forward current

0.5 A

2 A

not more than 5 V

not more than 5 V

Forward recovery time

not more than 4 µs

Reverse recovery time

not more than 1 µs

Total capacitance

2 pF

Minimum lifetime

80000 h

Minimum lifetime at 0.5 voltage and current

120000h

Minimum shelf life

5 years

Case type

KD-2; DO-35

Dimensions (length x diameter)

60.5x2.2 mm

Mass

not more than 0.15 g

Operational temperature

+25 oC

Diode case temperature

not more than +125 oC

Allowed stretching force

not more than 5 N

Self-resonant frequency

10 kHz

Allowed static potential

2000 V

2D103A/SO diodes are marked with 3 stripes: yellow and blue mean the diode type, black - the “+” pin side

You can order 2D103A1/SO from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com