Epitaxial passivated silicon rectifying diode for use in special-purpose equipment
Diodes are produced in a glass case with platynite pins.
Technical parameters
| Leakage currentat backward voltage 75 V 100 V | not more than 1 µA not more than 10 µA |
| Forward voltage at forward current 50 mA | not more than 1 V |
| Steady-state forward voltage at 10 µs time rating and forward current 0.5 A 2 A | not more than 1.5 V not more than 2.5 V |
| Impulse-state forward voltage at 10 µs time rating and forward current 0.5 A 2 A | not more than 5 V not more than 5 V |
| Forward recovery time | not more than 4 µs |
| Reverse recovery time | not more than 1 µs |
| Total capacitance | 2 pF |
| Minimum lifetime | 80000 h |
| Minimum lifetime at 0.5 voltage and current | 120000h |
| Minimum shelf life | 5 years |
| Case type | KD-2; DO-35 |
| Dimensions (length x diameter) | 60.5x2.2 mm |
| Mass | not more than 0.15 g |
| Operational temperature | +25 oC |
| Diode case temperature | not more than +125 oC |
| Allowed stretching force | not more than 5 N |
| Self-resonant frequency | 10 kHz |
| Allowed static potential | 2000 V |
2D103A/SO diodes are marked with 3 stripes: yellow and blue mean the diode type, black - the “+” pin side
