Silicon rectifying diode for use in generators as a part of contactless excitation circuit with operational frequency up to 2000 Hz
Main parameters
| Current, A (at case temperature, oC) | 10 (160) |
| Repeating impulse reverse voltage, V | 400 |
| Non-repeating impulse reverse voltage, not less than, V (at junction temperature 200±5 oC) | 460 |
| Surge forward current, not more than, A (at junction temperature 25±5 oC) | 270 |
| Surge current, not more than, A (at junction temperature 200±5 oC) | 250 |
| Impulse forward voltage, not more than, V (at junction temperature 25±5 oC) | 1.35 |
| Repeating impulse reverse voltage, not more than, mA (at junction temperature 200±5 oC) | 4 |
| Thermal resistance (junction case), not more than, oC/W (at constant forward current) | 2.5 |
| Reverse recovery time, not more than, mks (at junction temperature 200±5 oC) | 6.3 |
| Silver content, g | 0.02389 |
Diode class
| Class | Repeating impulse reverse voltage, V | Non-repeating impulse reverse voltage, V | Operational impulse reverse voltage, V | Constant reverse voltage, V |
| 4 | 400 | 460 | 320 | 240 |
