Silicone epitaxial-passivated impulse semiconductor diode matrix in a metal-ceramic case.
Case type 402.12-2
Ambient air temperature -60..+125 oC
Electrical parameters at +25±10 oC
| not less than | not more than | |
| Constant leakage current, µA (at reverse voltage 50 V) | 5 | |
| Constant forward voltage, V (at forward current 300 mA) | 0.95 | 1.35 |
| Reverse recovery time, ns | 50 | |
| Total capacitance, pF | 32 |
Operational limits
| Constant reverse voltage, V | 50 |
| Forward current, mA | 300 |
