Silicone epitaxial-planar impulse semiconductor diode matrix for use in special purpose equipment
Technical requirement version dR3.454.000 TU
Case type 401.16-3 (metal-ceramic)
Ambient air temperature -60..+125 oC
Electrical parameters at +25±10 oC
| not less than | not more than | |
| Constant leakage current, µA (at reverse voltage 50 V) | 2.0 | |
| Constant forward voltage, V (at forward current 200 mA) | 0.85 | 1.15 |
| Reverse recovery time (at forward current 200 mA, reverse voltage 20 V, total resistance 1 k?), ns | 40 | |
| Total capacitance (at reverse voltage 50 V), pF | 5.0 |
Operational limits
| Constant reverse voltage, V | 50 |
| Forward current, mA | 200 |
