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2DS627A

Silicone epitaxial-planar impulse semiconductor diode matrix for use in special purpose equipment

Technical requirement version dR3.454.000 TU

Case type 401.16-3 (metal-ceramic)

Ambient air temperature -60..+125 oC

Electrical parameters at +25±10 oC

not less than

not more than

Constant leakage current, µA (at reverse voltage 50 V)

2.0

Constant forward voltage, V (at forward current 200 mA)

0.85

1.15

Reverse recovery time (at forward current 200 mA, reverse voltage 20 V, total resistance 1 k?), ns

40

Total capacitance (at reverse voltage 50 V), pF

5.0

Operational limits

Constant reverse voltage, V

50

Forward current, mA

200

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