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2P103A

Transistors 2P103A

2P103A

Diffused planar field-effect silicon transistor with p-n gate and n-channel for low-frequency DC amplifiers with high input resistance.

Case type: KT-1-7 (TO-18), metal-glass with flexible terminals.

Device type is indicated on its case.

Mass not more than 1 g.

Technical requirement version TF3.365.000 TU

Maximum power dissipation, mW

120

Maximum drain-to-source voltage, V

10

Maximum gate-to-drain voltage, V

15

Maximum gate-to-source voltage, V

10

Cut-off (gate-to-source) voltage, V

0.5..2.2

Active input conductance incommon source circuit,µs

<40

Gate leakage current, nA

10

Mutual transconductance, mA/V

0.7..2.1

Initial drain current, mA

0.55..1.2

Input capacitance (gate-to-source with output short-circuit in common source AC circuit), pF

<17

Input-to-output capacitance (gate-to-drain with input short-circuit in common source AC circuit), pF

<8

Noise ratio, dB

3

Ambient air temperature, oC

-60..+85

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