Transistors 2P103А, 2P103B, 2P103V, 2P103G, 2P103D silicon planar-diffused based on p-n transfer and p-type track.
Transistors are designed for application in input cascades of low frequency amplifiers and direct current with high input resistance.
Transistors are produced in metal-glass casing with flexible lead-outs.
Transistor maximum weight – 1g.
Casing type: KT-1-7 (TO-18).
Basic characteristics of transistors 2P103А, 2P103B, 2P103V, 2P103G, 2P103D:
| Transistor type | Parameters maximum values at Т=25°С | Parameters values at Т=25°С | Тenv | |||||||||||
| Рmax | Umax | Uzmax | Uzmax | Imax | U | g22I | IЗ УТ | S | Is | S11I | S12I | KSH | ||
| mVt | V | V | V | mА | V | mcSm | nА | mА/V | mА | pF | pF | dB | °С | |
| 2P103А | 120 | 10 | 15 | 10 | - | 0,5…2,2 | <40 | 10 | 0,7…2,1 | 0,55…1,2 | <17 | <8 | 3 | -60…+85 |
| 2P103B | 120 | 10 | 15 | 10 | - | 0,8…3 | <50 | 10 | 0,8…2,6 | 1…2,1 | <17 | <8 | 3 | -60…+85 |
| 2P103V | 120 | 10 | 15 | 10 | - | 1,4…4 | <80 | 10 | 1,4…3,5 | 1,7…3,8 | <17 | <8 | 3 | -60…+85 |
| 2P103G | 120 | 10 | 17 | 10 | - | 2…6 | <130 | 10 | 1,8…3,8 | 3…6,6 | <17 | <8 | 3 | -60…+85 |
| 2P103D | 120 | 10 | 17 | 10 | - | 2,8…7 | <160 | 10 | 2,0…4,4 | 5,4…12 | <17 | <8 | 3 | -60…+85 |
