2P103G
Diffused planar field-effect silicon transistor with p-n gate and n-channel for low-frequency DC amplifiers with high input resistance.
Case type: KT-1-7 (TO-18), metal-glass with flexible terminals.
Device type is indicated on its case.
Mass not more than 1 g.
Technical requirement version TF3.365.000 TU
| Maximum power dissipation, mW | 120 | |
| Maximum drain-to-source voltage, V | 10 | |
| Maximum gate-to-drain voltage, V | 17 | |
| Maximum gate-to-source voltage, V | 10 | |
| Cut-off (gate-to-source) voltage, V | 2..6 | |
| Active input conductance incommon source circuit, mkS | <13 | |
| Gate leakage current, nA | 10 | |
| Mutual transconductance, mA/V | 1.8..3.8 | |
| Initial drain current, mA | 3..6.6 | |
| Input capacitance (gate-to-source with output short-circuit in common source AC circuit), pF | <17 | |
| Input-to-output capacitance (gate-to-drain with input short-circuit in common source AC circuit), pF | <8 | |
| Noise ratio, dB | 3 | |
| Ambient air temperature, oC | -60..+85 |
