2P302B
Silicone planar field transistor with a p-n gate and n-type channel. Transistors are suitable for wide-band amplifiers with frequencies up to 150 MHz, switching devices and other special purpose equipment.
Case type: metal-glass with flexible terminals, KT-2-12
Technical parameters (at +25 oC)
| Maximum allowed power dissipation, mW | 300 |
| Maximum frequency, MHz | 150 |
| Maximum drain-to-source voltage, V | 20 |
| Maximum gate-to-drain voltage, V | 20 |
| Maximum gate-to-source voltage, V | 10 |
| Maximum drain current, A | 43 |
| Cut-off voltage, V | <7 |
| Gate leakage current, nA | <10 |
| Mutual transconductance, mA/V | >7 |
| Drain initial current, mA | 18..43 |
| Drain residual current, mA | 6 |
| Input capacitance (gate-to-source), pF | <20 |
| Input-to-output capacitance (gate-to-drain), pF | <8 |
| Make time, not more than, ns | 4 |
| Release time, not more than, ns | 5 |
| Ambient air temperature, oC | -60..+125 |
