Silicon epitaxial-planar with p-n-p structure, amplifying transistors.
Transistors 2Т203А, 2Т203B, 2Т203V, 2Т203G, 2Т203D are designed for application in amplifiers and pulse devices.
Transistors are produced in metal-glass casing with flexible leads.
Device type is marked on casing.
Maximum weight 0,5 g.
Casing type: KТ-1-7.
Characteristics of transistors 2Т203А, 2Т203B, 2Т203V, 2Т203G, 2Т203D:
| Transistor type | Structure | Parameters maximum values at Тp=25°С | Parameters values at Тp=25°С | Tp | Т | ||||||||||||
| Ik | Ik. I. | UkeR max | UkБ0 max | Ueb0 max | Рkmax | h21E | Uke | IkbО | IebО | f l. | KSH | SK | SE | ||||
| mА | mА | V | V | V | mW | V | mcА | mcА | MHz | dB | pF | pF | °С | °С | |||
| 2Т203А | p-n-p | 10 | 50 | 60 | 60 | 30 | 150 | >9 | 0,5 | 1 | - | >5 | - | 10 | - | 150 | -60…+125 |
| 2Т203B | p-n-p | 10 | 50 | 30 | 30 | 15 | 150 | 30…90 | 1 | 1 | - | >5 | - | 10 | - | 150 | -60…+125 |
| 2Т203V | p-n-p | 10 | 50 | 15 | 15 | 10 | 150 | 15…100 | 0,5 | 1 | - | >5 | - | 10 | - | 150 | -60…+125 |
| 2Т203G | p-n-p | 10 | 50 | 60 | 60 | 30 | 150 | >40 | 0,5 | 1 | - | >10 | - | 10 | - | 150 | -60…+125 |
| 2Т203D | p-n-p | 10 | 50 | 15 | 15 | 10 | 150 | 60…200 | 0,35 | 1 | - | >10 | - | 10 | - | 150 | -60…+125 |
