2T208I
Silicon epitaxial-planar p-n-p transistor for amplifiers and impulse device.
Case: metal-glass with flexible terminals, type KT-1-7, mass not more than 0.6 g.
Technical requirement version YuF3.365.035TU
Main parameters
| Maximum allowed collector constant current, mA | 150 |
| Maximum allowed collector impulse current, mA | 300 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V | 45 |
| Maximum collector-to-emitter voltage at given collector current and zero base current, V | 45 |
| Maximum allowed emitter-to-base voltage at zero collector current, V | 20 |
| Maximum allowed collector power dissipation, W | 200 |
| Static current transfer coefficient | 40..120 |
| Collector-to-emitter saturation voltage, V | 0.3 |
| Collector reverse current, mkA | 1 |
| Emitter reverse current, mkA | 1 |
| Beta cutoff, MHz | >5 |
| Collector junction capacitance, pF | 35 |
| Emitter junction capacitance, pF | 20 |
| Maximum allowed junction temperature, oС | +150 |
| Ambient air temperature, oC | -60..+125 |
