Amplifying p-n-p epitaxial-planar silicon transistor with noise ratio, standardized at 100 Mhz. Designed for use in logarithmic video amplifiers and high-frequency linear amplifiers
Case type: KT-1-7(TO-18), metal-glass with flexible terminals.
Mass not more than 0.5 g.
Climate version: boreal
Lifetime: 80000 h in all modes, 100000 in light mode
Technical parameters
| Maximum allowed collector constant current, mA | 200 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V | 60 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 60 |
| Maximum emitter-to-base voltage at zero collector current, V | 5 |
| Maximum allowed collector power dissipation, mW | 300 |
| Static current transfer coefficient | 50..150 |
| Collector-to-emitter saturation voltage, V | 0,2 |
| Collector reverse current, mkA | 0,1 |
| Beta cutoff, MHz | 250 |
| Noise ratio, dB | 6 |
| Collector junction capacitance, pF | 5 |
| Emitter junction capacitance, pF | 6 |
| Junction temperature, oC | -60..+125 |
| Ambient air temperature, oC | -60..+125 |
