2T3117A

Transistors 2Т3117Аare silicon epitaxial-planar of n-p-n structure, pulse.

Transistors are designed for application in pulse and switching devices.
Transistors are produced in metal-glass casing with flexible lead-outs.
Device type – marked on casing.
Transistor weight, maximum 0,4 g.
Casing type: KТ-1-7.
Technical conditions: аА0.339.256 ТU.

Basic technical characteristics of transistors 2Т3117А:
• transistor structure: p-n-p;
• Рk t max – constant dissipated wattage of collector with heatsink: 300 mW;
• fgr - limit frequency of coefficient of current transmitting of transistor for scheme with common emitter: minimum 200 МHz;
• Ukbоmax – maximum voltage collector – base at given reverse current of collector and open circuit of emitter: 60 V;
• Uebоmax – maximum voltage emitter – base at given reverse current of emitter and open circuit of collector: 4 V;
• Ik max – maximum direct current of collector: 400 mА;
• Ikbо– reverse current of collector: maximum 5 mcА(60V);
• h21e – static coefficient of current transmitting of transistor for schemes with common emitter: in high signal mode: 40 … 200;
• Rke sat – saturation resistance between collector and emitter: maximum 1,2 Оm

Technical characteristics of transistors 2Т3117А: