Amplifying silicon mesa-epitaxial planar p-n-p transistor with rated noise factor at 100 MHz. Can be used in video logarithmic amplifiers and high-frequency linear amplifiers.
Transistors are produced in metal-glass case with flexible terminals.
Transistor type is marked on its case.
Mass not more than 0.5 g
Case type KT-1-7
Main parameters
| Maximum allowed collector constant current, mA | 200 |
| Maximum emitter-to collector voltage at given collector current and base-to-emitter circuit resistance, V | 45 |
| Maximum collector-to-base current at given collector current and zero emitter current, V | 45 |
| Maximum emitter-to-base constant voltage at zero collector current, V | 5 |
| Maximum allowed collector power dissipation, mW | 300 |
| Static current transfer coefficient | 100..300 |
| Collector-to-emitter saturation voltage, V | 0.2 |
| Collector reverse current, µA | 0.1 |
| Beta cutoff, MHz | 300 |
| Noise factor, dB | 6 |
| Collector junction capacitance, pF | 5 |
| Emitter junction capacitance, pF | 6 |
| Junction temperature, oC | -60..+125 |
| Ambient air temperature, oC | -60..+125 |
