2T603A

Transistors 2Т603А are silicon epitaxial planar with n-p-n structure.
Transistors are designed for application in pulse and switching high frequency devices.
Transistors are produced in metal glass casing with flexible lead-outs.

Transistor maximum weight 1,75 g.

Basic technical characteristics of transistor 2Т603А:

• Transistor structure: n-p-n;
• Рc max – Collector constant dissipated power: 0,5 Vt;
• fgr – Cut-off frequency of current transmitting coefficient for common-emitter circuits: minimum 200 Mhz;
• Ucb max – Maximum voltage collector-base at given current of collector and open circuit of emitter: 30 V;
• Ueb max – Maximum voltage of emitter-base at given reverse current of emitter and open circuit of collector: 3 V;
• Ic max – Maximum constant current of collector: 300 mА;
• Ic p max – Maximum pulse current of collector: 600 mА;
• Icb – Reverse current of collector – current through collector junction at given reverse voltage collector-base and open lead-out of emitter: maximum 3 mcА;
• h21e – Static coefficient of current transmitting for circuits with common emitter: 20...80;
• Сc – Capacitance of collector junction: maximum 15 pF;
• Rce sat – Saturation resistance between collector and emitter: maximum 7 Om

Technical characteristics of transistors 2Т603А, 2Т603B, 2Т603V, 2Т603G, 2Т603I: