Silicon epitaxial-planar n-p-n transistors , designed for use inimpulse andswitching high-frequency devices.
Case type: metal-glass with flexible terminals, type KTYu-3-6
Device type is indicated on its case
Mass not more than 1.75 g
Technical requirement version I96.365.003 TU
Technical parameters
| Maximum allowed constant collector current, mA | 300 | |
| Maximum allowed impulse collector current, mA | 600 | |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter circuit resistance, V | 30 | |
| Maximum collector-to-base current at given collector current and zero emitter current, V | 30 | |
| Maximum emitter-to-base voltage at zero collector current, V | 3 | |
| Maximum collector power dissipation, W | 0.5 | |
| Static current transfer coefficient | 60..180 | |
| Collector-to-emitter saturation voltage, V | <0.8 | |
| Collector reverse current, mkA | <3 | |
| Emitter reverse current, mkA | <3 | |
| Beta cutoff, MHz | >200 | |
| Collector junction capacitance, pF | <15 | |
| Emitter junction capacitance, pF | <40 | |
| Maximum allowed junction temperature, oC | +150 | |
| Ambient air temperature, oC | -60..+125 |
