2T704B
Impulse n-p-n silicon mesaplanar transistor for use in high-voltage impulse modulators.
Transistors are produced in a metal-ceramic case with hard terminals and screw.
Transistor type is marked on its case. Emitter terminal is marked with a dot.
Mass not more than 20 g
Case type: KT-10
Main parameters
| Structure | n-p-n |
| Maximum constant collector current, A | 2.5 |
| Maximum impulse collector current, A | 4 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V | 400 |
| Maximum emitter-to base voltage at zero collector current, A | 4 |
| Maximum collector power dissipation, W | 15 |
| Static current transfer coefficient | 10..100 |
| Collector-to-emitter saturation voltage, V | 5 |
| Collector reverse current, mA | 5 |
| Emitter reverse current, mA | 100 |
| Beta cutoff, MHz | 3 |
| Maximum junction temperature, oC | 125 |
| Ambient air temperature, oC | -60..+125 |
