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Silicone Mesaplanar Composite Switching Transistor with p-n-p structure.

Designed for amplifiers and switching devices.

Manufactured in metal package with glass insulators and flexible lead.

Transistor type is stated on the package.

Max weight 2 g

Main technical characteristics:
• Structure: p-n-p
• Рc max – Total heat sink collector dissipation: 5 W;
•fc – Cutoff frequency of a common-emitter amplifier: min 3 MHz;
• Ucer max – Maximum collector-emitter voltage for given collector current and given resistance in the base-emitter circuit: 80 V;
• Uebo max – Maximum emitter-base voltage for given emitter reverse current and open collector circuit: 5 V;
• Ic max – Maximum direct current rating of a collector: 2,5 A;

• h21 - Static value of the forward current transfer ratio for common-emitter amplifier: min 750

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