Amplifying n-p-n mesaplanar silicon transistors for switching devices and voltage/current regulators.
2T935-A transistor is produced in a metal case with glass insulators and hard terminals.
Mass not more than 22 g.
Case type: KT-9 (TO-3)
Technical requirement aA0.339.209 TU
Electrical parameters
| Static current transfer ratio at Tc=+25 oC at Tc=+125 oC, not less than at Tc=-60 oC, not less than at Tc=+25 oC, Uce = 5 V, Ic = 10 A | 150..500*..3000* 150 50 |
| Static current transfer ratiomodule at Uce=5 V, Ik=5 A, f=1 MHz | 4*..5*..7.8* |
| Critical voltage at Ic=0.1 A,L=25 µH, V | 350..375*..440* |
| Collector-to-emitter saturation voltage at Ic= 15 A, Ib=1,5 A, V | 1.2*..1.5*..2 |
| Decay time at Uce=250 V, Ube=5 V, Ic= 10 A, Ib=1,5A, µs | 0.25*..0.6*..1.2* |
| Collector-to-emitter reverse current at Rbe=100 ?, not more than, mA at Tc= +25 oC, Uce=max bogey value at Tc=min, Uce=max at Tc=max, Uce=max | 3 0.2* 3 3 |
| Emitter reverse current at Ube=5 V, not more than, mA bogey value | 50 25* |
Operational limits
| Collector-to-emitter constant voltage1 at Rbe=100 ? and Tc=-40..+85oC, V | 450 |
| Collector-to-emitter impulse voltage at Rbe=100?, impulse time ≥0.2 µs | 350 V |
| Emitter-to-base constant voltage | 8 V |
| Collector constant current | 15 A |
| Collector impulse current at impulse time ≤0.5µs, pulse ratio ≥100 | 20 A |
| Base constant current | 3.5 A |
| Base impulse current at impulse time ≤0.5 µs, pulse ratio ≥100 | 7 A |
| Collector power dissipation2 at Tc=min..+25oC | 100 W |
| P-n junction temperature | +150 oC |
| Ambient air temperature | -60..+125 oC |
1at Tc=-40..-60oC and Tc=+85..+125oC voltage decreases straight till 350 V
2at Tc≥+25oC Pc max = (Tj – Tc)/RT (J-C) W, where RT (J-C) is defined in peak mode
Collector-to-emitter constant voltage does not depend on base-to-emitter resistance (up to 10 k?).
Maximum static potential value 2000 V
Soldering is recommended not closer than 5 mm to case at +260 oC (max) during not more than 10 s.
