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2T834B

Amplifying n-p-n mesaplanar silicon transistors for switching devices and voltage/current regulators.

2T935-A transistor is produced in a metal case with glass insulators and hard terminals.

Mass not more than 22 g.

Case type: KT-9 (TO-3)

Technical requirement aA0.339.209 TU

Electrical parameters

Static current transfer ratio

at Tc=+25 oC

at Tc=+125 oC, not less than

at Tc=-60 oC, not less than

at Tc=+25 oC, Uce = 5 V, Ic = 10 A

150..500*..3000*

150

50

Static current transfer ratiomodule at Uce=5 V, Ik=5 A, f=1 MHz

4*..5*..7.8*

Critical voltage at Ic=0.1 A,L=25 µH, V

350..375*..440*

Collector-to-emitter saturation voltage at Ic= 15 A, Ib=1,5 A, V

1.2*..1.5*..2

Decay time at Uce=250 V, Ube=5 V, Ic= 10 A, Ib=1,5A, µs

0.25*..0.6*..1.2*

Collector-to-emitter reverse current at Rbe=100 ?, not more than, mA

at Tc= +25 oC, Uce=max

bogey value

at Tc=min, Uce=max

at Tc=max, Uce=max

3

0.2*

3

3

Emitter reverse current at Ube=5 V, not more than, mA

bogey value

50

25*

Operational limits

Collector-to-emitter constant voltage1 at Rbe=100 ? and Tc=-40..+85oC, V

450

Collector-to-emitter impulse voltage at Rbe=100?, impulse time ≥0.2 µs

350 V

Emitter-to-base constant voltage

8 V

Collector constant current

15 A

Collector impulse current at impulse time ≤0.5µs, pulse ratio ≥100

20 A

Base constant current

3.5 A

Base impulse current at impulse time ≤0.5 µs, pulse ratio ≥100

7 A

Collector power dissipation2 at Tc=min..+25oC

100 W

P-n junction temperature

+150 oC

Ambient air temperature

-60..+125 oC

1at Tc=-40..-60oC and Tc=+85..+125oC voltage decreases straight till 350 V

2at Tc≥+25oC Pc max = (Tj – Tc)/RT (J-C) W, where RT (J-C) is defined in peak mode

Collector-to-emitter constant voltage does not depend on base-to-emitter resistance (up to 10 k?).

Maximum static potential value 2000 V

Soldering is recommended not closer than 5 mm to case at +260 oC (max) during not more than 10 s.

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