2T834V
Amplifying mesaplanar n-p-n silicon transistorfor voltage and current regulators and switching devices.
Case type KT-9 (TO-3), metal with glass insulators and hard terminals.
Mass not more than 22 g.
Technical requirement version: aA0.339.209 TU
Technical parameters (at junction temperature 25 oC)15
| Maximum collector constant current, A | 15 | |
| Maximum collector impulse current, A | 20 | |
| Maximum collector-to-emitter voltage (at given collector current and base-to-emitter resistance), V | 500 | |
| Maximum emitter-to-base voltage (at zero collector current), V | 8 | |
| Collector power dissipation, W | 100 | |
| Static current transfer coefficient | >150 | |
| Collector-to-emitter saturation voltage, V | <2 | |
| Emitter reverse current (at given emitter-to-base reverse voltage and open collector output), mA | <50 | |
| Collector-to-emitter reverse current (at given collector-to-emitter reverse voltage and emitter-to-base circuit resistance), mA | <3 | |
| Beta cutoff, MHz | >4 | |
| Collector junction capacitance, pF | <100 | |
| Maximum allowed junction temperature, oC | 150 | |
| Ambient air temperature, oC | -60..+125 |
