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2T834V

2T834V

Amplifying mesaplanar n-p-n silicon transistorfor voltage and current regulators and switching devices.

Case type KT-9 (TO-3), metal with glass insulators and hard terminals.

Mass not more than 22 g.

Technical requirement version: aA0.339.209 TU

Technical parameters (at junction temperature 25 oC)15

Maximum collector constant current, A

15

Maximum collector impulse current, A

20

Maximum collector-to-emitter voltage (at given collector current and base-to-emitter resistance), V

500

Maximum emitter-to-base voltage (at zero collector current), V

8

Collector power dissipation, W

100

Static current transfer coefficient

>150

Collector-to-emitter saturation voltage, V

<2

Emitter reverse current (at given emitter-to-base reverse voltage and open collector output), mA

<50

Collector-to-emitter reverse current (at given collector-to-emitter reverse voltage and emitter-to-base circuit resistance), mA

<3

Beta cutoff, MHz

>4

Collector junction capacitance, pF

<100

Maximum allowed junction temperature, oC

150

Ambient air temperature, oC

-60..+125

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