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2T837B

Transistors

Transistors 2T837B are silicon epitaxial-diffused with p-n-p structure, switching.
Transistors 2Т837А, 2Т837B, 2Т837V, 2Т837G, 2Т837D, 2Т837Еare designed for application in amplifiers and switching devices.
Transistor casing is plastic with stiff lead-outs.
Transistor maximum weight 2,5 g.

Basic technical characteristics of transistors 2Т837B:
• Transistor structure: p-n-p;
• Рc t max – Constant dissipated power of collector with heatsink: 30 Vt;
• Ucbоmax – Maximum voltage collector-base at given reverse current of collector and open circuit of emitter: 60 V;
• Uebоmax – Maximum voltage emitter-base at given reverse current of emitter and open circuit of collector: 15 V;
• Ic max – Maximum constant current of collector: 8 А;
• Icbо– Reverse current of collector: maximum 0,15 mА;
• h21e – Static coefficient of current transmitting of transistor for circuits with common emitter: 30... 150;
• Rce sat – Saturation resistance between collector and emitter: maximum 0,8 Om

Technical characteristics of transistors 2Т837А, 2Т837B, 2Т837V, 2Т837G, 2Т837D, 2Т837Е:

Transistor type

Structure

Maximum values of parameters at Тp=25°С

Values of parameters at Тp=25°С

Tp
max

Т
max

Ic
max

Ici.
max

UceR max
(Uce0 max)

Ucb0 max

Ueb0 max

Рcmax
(Рc. Т.max)

h21e

Uce sat.

IcbО

IebО

IceR

f gr.

Сc

Сe

А

А

V

V

V

Vt

V

mA

mA

mA

MHz

pF

pF

°С

°С

2Т837А

p-n-p

8

-

70

80

15

1 (30)

15…120

0,9

<0,15

<0,3

<5

>3

-

-

125

-60…+100

2Т837B

p-n-p

8

-

55

60

15

1 (30)

30…150

0,9

<0,15

<0,3

<5

>3

-

-

125

-60…+100

2Т837V

p-n-p

8

-

40

45

15

1 (30)

40…180

0,9

<0,15

<0,3

<5

>3

-

-

125

-60…+100

2Т837G

p-n-p

8

-

70

80

5

1 (30)

15…120

0,9

<0,15

<0,3

<5

>3

-

-

125

-60…+100

2Т837D

p-n-p

8

-

55

60

5

1 (30)

30…150

0,9

<0,15

<0,3

<5

>3

-

-

125

-60…+100

2Т837Е

p-n-p

8

-

40

45

5

1 (30)

40…180

0,9

<0,15

<0,3

<5

>3

-

-

125

-60…+100

You can order 2T837B from us