2T835A

2T835A (KT835A) transistors

Silicon mesa-epitaxial planar amplifying transistors of the p-n-p structure. The components are designed to be used in amplifiers, converters and impulse devices. The casing is made of plastic with hard leads.

The mass of the transistor is not more than 2.5 g.

Manufacturer — Voronezh semiconductor factory PLLC, Voronezh.

Electrical characteristics

Static current gain in common emitter mode:
at U_CE = 1 V, I_C = 1 Аfor KT835A, not lower than................................................. 25
at U_CE = 5 V, I_C = 2 Аfor KT835B ........................................................................... 10-100

Frequency limit of the static current gain in common emitter mode, not lower than1 MHz

Collector-emitter saturation voltage, not more than:
at I_C = 1 А, I_B = 0.2 Аfor KT835A.............................................................................................................................. 0.35 V
at I_C = 3 А, I_B = 0.6 Аfor KT835B............................................................................ 2.5 V

Collector cut-off current at U_CB = U_{CB MAX}:
KT835A.................................................................................................................. 100 μA
KT835B.................................................................................................................. 150 μA

Collector junction capacitance at U_CB = 30 V, not more than..................................... 800 pF

Operational limits

Collector-base DC voltage:
KT835A............................................................................................................. 30 V
KT835B.............................................................................................................. 45 V

Collector-emitter DC voltage.................................................................................. 30 V

Base-emitter DC voltage......................................................................................... 4 V

DC current of the collector:
KT835A............................................................................................................. 3 A
KT835B.............................................................................................................. 7.5 A

Continuous dissipated power at T_C = — 40...+25 °С............................................... 25 W

P-n junction temperature....................................................................................... +125 °С

Environment temperature...................................................................................... —40...+100 °С