Switching silicon planar n-p-n transistor for application in switching devices, impulse modulators, high-power converters, linear voltage stabilizers.
Transistors are produced in metal case with glass insulators and hard terminals.
Transistor type is marked on its case.
Mass not more than 20 g.
Case type KT-9 (TO-3)
Main parameters
| Maximum allowed collector constant current, A | 10 |
| Maximum allowed collector impulse current, A | 15 |
| Maximum emitter-to collector voltage at given collector current and base-to-emitter circuit resistance, V | 350 |
| Maximum collector-to-base current at given collector current and zero emitter current, V | 600 |
| Maximum emitter-to-base constant voltage at zero collector current, V | 5 |
| Maximum allowed collector power dissipation (without heatsink), W | 3 |
| Maximum allowed collector power dissipation (with heatsink), W | 50 |
| Static current transfer coefficient | >12 |
| Collector-to-emitter saturation voltage, V | <1.5 |
| Collector reverse current, mA | <3 |
| Emitter reverse current, mA | <10 |
| Beta cutoff, MHz | >10 |
| Collector junction capacitance, pF | <300 |
| Emitter junction capacitance, pF | <5000 |
| Junction temperature, oC | 150 |
| Ambient air temperature, oC | -60..+125 |
