The transistors 2T845A are silicon mesa-planar switching transistors of the n-p-n structure type.
They are intended to be used in switching and pulse devices. They are produced in a metal case with glass insulators and rigid leads. They are marked with a digital-alphabetical code on the transistor case.
Type of casing: KT-9 (TO-3).
Mass of the transistor not more than 20.0 g.
Warranty storage period of the transistors is 25 years from the date of inspection, in case of product retesting - from the retest date.
Guaranteed lifetime:
- 25000 hours - in the modes allowed by the technical conditions;
- 40000 hours - in the light load mode.
The guaranteed lifetime is calculated within the warranty storage period.
Main technical specifications:
Transistor structure: n-p-n;
Рc h max - continuous dissipated power of the collector with a heatsink: 40 W;
flim - frequency limit of the static current gain of the transistor in common-emitter circuit: not lower than 4.5 MHz;
Ucer max - maximum collector-emitter voltage at a specified current of the collector and set resistance in the base-emitter circuit: 400 V (0.01 kOhm);
Uebo max - maximum emitter-base voltage at a specified emitter reverse current and open collector circuit: 4 V;
Ic max - maximum permissible DC current of the collector: 5 А;
Ic imp max - maximum permissible impulse current of the collector: 7.5 А;
Icer - reverse collector-emitter current at a specified reverse collector-emitter voltage and resistance in the base-emitter circuit: 3 mA (400 V);
h21e (hFE) - Static collector-to-base current gain: 15... 100;
Сc - collector junction capacitance: not more than 45 pF;
Rce sat - collector-emitter saturation resistance: not more than 0.75 Ohm;
tdis - time of discharge: not more than 4000 ns.
