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2T847A

2T847A

Silicon mesaplanar n-p-n amplifyingtransistors, designed for use in secondary power supply sources

Case type: metal with glass insulators and hard terminals, type KT-9 (TO-3)

Device type is indicated on its case

Mass not more than 20 g

Technical requirement version aA0.339.361 TU

Technical parameters

Maximum allowed constant collector current, A

15

Maximum allowed impulse collector current, A

25

Maximum collector-to-emitter voltage at given collector current and base-to-emitter circuit resistance, V

650

Maximum emitter-to-base voltage at zero collector current, V

8

Maximum collector power dissipation, W

125

Static current transfer coefficient

>8

Collector-to-emitter saturation voltage, V

<1.5

Collector reverse current, mA

5

Emitter reverse current, mA

100

Beta cutoff, MHz

>15

Collector junction capacitance, pF

<200

Maximum allowed junction temperature, oC

+200

Ambient air temperature, oC

-60..+100


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