2T847A
Silicon mesaplanar n-p-n amplifyingtransistors, designed for use in secondary power supply sources
Case type: metal with glass insulators and hard terminals, type KT-9 (TO-3)
Device type is indicated on its case
Mass not more than 20 g
Technical requirement version aA0.339.361 TU
Technical parameters
| Maximum allowed constant collector current, A | 15 |
| Maximum allowed impulse collector current, A | 25 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter circuit resistance, V | 650 |
| Maximum emitter-to-base voltage at zero collector current, V | 8 |
| Maximum collector power dissipation, W | 125 |
| Static current transfer coefficient | >8 |
| Collector-to-emitter saturation voltage, V | <1.5 |
| Collector reverse current, mA | 5 |
| Emitter reverse current, mA | 100 |
| Beta cutoff, MHz | >15 |
| Collector junction capacitance, pF | <200 |
| Maximum allowed junction temperature, oC | +200 |
| Ambient air temperature, oC | -60..+100 |
