2T930B

Transistors 2Т930B are silicon epitaxial-planar generator with n-p-n structure.
Transistors are designed for application in power amplifiers, frequency multipliers and self-oscillators with frequency 100...400 Mhz and supply voltage 28 V.
Transistors are produced in metal-ceramic casing with strip lead-outs.

LC-section – casing inside.

Transistor weight, maximum 7g.

Casing type: KT-32.
TUchnical conditions: аА0.339.036 ТУ.

Basic technical characteristics of transistor 2Т930B:
• transistor structure: n-p-n;
• Рc h max – constant dissipated power of collector with heatsink: 75 W;
• fl – limit frequency of current transmitting of transistor for circuit with common emitter: over 450 МHz;
• Ucer dis – discharge voltage collector-emitter at given current of collector and given resistance in base-emitter circuit: 50 V (0,1kOm);
• Uebоmax – maximum voltage emitter-base at given reverse current of emitter and open circuit of collector: 4 V;
• Ic max – maximum pulse current of collector: 6 А;
• Icer – reverse current collector-emitter and resistance in base-emitter circuit: maximum 20 mА(50V);
• h21e – static coefficient of current transmitting of transistor for circuits with common emitter: over 40;
• Сc – collector junction capacitance: maximum 80 pF;
• Ca.р. – coefficient of power amplifying: minimum 6 dB;
• Рout – output power of transistor: minimum 40 W with frequency 400 МHz;
• tк– timing constant of reverse connection circuit at high frequency: maximum 8 ps

Technical characteristics of transistors 2Т930А, 2Т930B: