2TS3103A is a PNP silicon planar dual transistor in a glass-to-metal package, consisting of two PNP amplifying high-frequency low-power transistors on a single chip with separate leads, designed for operation in differential amplifier stages.

Current transfer threshold frequency typical value f_{T}=900 MHz

Noise factor typical value (V_{CE}=5V, I_{E}=1mA, f=60 MHz, R_{G}=150 Ohm) F_{N}=4.2 dB

Maximum collector power dissipation (total of both transistors) P_{Cmax}=300 mW

Maximum continuous collector-emitter voltage V_{CEOmax}=15 V

Electrical Characteristics (at 0 ^{0}C... +70 ^{0}C)

Parameter, (test conditions), unit of measure | Symbol | at least | less than |

Collector cutoff current (V | I | 0.2 | |

Emitter cutoff current (V | I | 0.5 | |

Leakage current between transistors (V | I | 0.1 | |

Static forward current transfer ratio (V | h | 40 | 200 |

Ratio of static forward current gains ( (V | h | 0.9 | |

Modulus of the emitter-base DC voltage difference (V | ?V | 3 | |

Modulus of forward-current transfer ratios on high-frequency (V | |h | 6 | |

Collector-emitter saturation voltage (I | V | 0.6 | |

Feedback circuit time constant on high-frequency (V | τ | 80 | |

Collector junction capacity (V | C | 2.5 | |

Emitter junction capacity (V | C | 2.5 |

Limiting Operational Values

Parameter, unit of measure | Symbol | Value |

Maximum continuous collector-base voltage (at R | V | 15 |

Maximum continuous collector-emitter voltage, V | V | 15 |

Maximum continuous emitter-base voltage, V | V | 5 |

Maximum collector direct current, mA | I | 20 |

Collector pulse current at t | I | 50 |

Constant collector power dissipation (total of both transistors), mW at T≤+55 at T=+85 | P | 300 120 |

Junction temperature, | T | 175 |

Junction-to-ambient thermal resistance, | R | 400 |