2TS3103A is a PNP silicon planar dual transistor in a glass-to-metal package, consisting of two PNP amplifying high-frequency low-power transistors on a single chip with separate leads, designed for operation in differential amplifier stages.
Current transfer threshold frequency typical value fT=900 MHz
Noise factor typical value (VCE=5V, IE=1mA, f=60 MHz, RG=150 Ohm) FN=4.2 dB
Maximum collector power dissipation (total of both transistors) PCmax=300 mW
Maximum continuous collector-emitter voltage VCEOmax=15 V
Electrical Characteristics (at 0 0C... +70 0C)
| Parameter, (test conditions), unit of measure | Symbol | at least | less than |
| Collector cutoff current (VCB=15 V), µA | ICBO | 0.2 | |
| Emitter cutoff current (VEB=5 V), µA | IEBO | 0.5 | |
| Leakage current between transistors (VT1T2=20 V), µA | IТ1Т2O | 0.1 | |
| Static forward current transfer ratio (VCB=1 V,IE=1 mA, tP=2 ms, f ≤50 Hz) | h21E1,2 | 40 | 200 |
| Ratio of static forward current gains ( (VCB=1 V,IE=1 mA, tP=2 ms, f=50 Hz) | h21E1/ h21E2 | 0.9 | |
| Modulus of the emitter-base DC voltage difference (VCB=5V, IE=1 mA), mV | ?VEB1- VEB2? | 3 | |
| Modulus of forward-current transfer ratios on high-frequency (VCB=1 V, IE=1mA, f=100 MHz) | |h21E1,2| | 6 | |
| Collector-emitter saturation voltage (IC=10 mA, IB=1mA),V | VCE(sat) | 0.6 | |
| Feedback circuit time constant on high-frequency (VCB=5V, IE=3mA, f=30 MHz), ps | τK | 80 | |
| Collector junction capacity (VCB=5 V, f=5-10 MHz), pF | CC | 2.5 | |
| Emitter junction capacity (VCB=0 V, f=5-10 MHz), pF | CE | 2.5 |
Limiting Operational Values
| Parameter, unit of measure | Symbol | Value |
| Maximum continuous collector-base voltage (at REB ≤ 15 kOhm),V | VCBmax | 15 |
| Maximum continuous collector-emitter voltage, V | VCEOmax | 15 |
| Maximum continuous emitter-base voltage, V | VEBmax | 5 |
| Maximum collector direct current, mA | ICmax | 20 |
| Collector pulse current at tP ≤ 10 µs, Q ³2.5, mA | ICPmax | 50 |
| Constant collector power dissipation (total of both transistors), mW at T≤+550C at T=+850C | PCmax | 300 120 |
| Junction temperature,0C | TJ | 175 |
| Junction-to-ambient thermal resistance,0C/W | RθJA | 400 |
