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2TS3103A

2TS3103A is a PNP silicon planar dual transistor in a glass-to-metal package, consisting of two PNP amplifying high-frequency low-power transistors on a single chip with separate leads, designed for operation in differential amplifier stages.

Current transfer threshold frequency typical value fT=900 MHz

Noise factor typical value (VCE=5V, IE=1mA, f=60 MHz, RG=150 Ohm) FN=4.2 dB

Maximum collector power dissipation (total of both transistors) PCmax=300 mW

Maximum continuous collector-emitter voltage VCEOmax=15 V

Electrical Characteristics (at 0 0C... +70 0C)

Parameter, (test conditions), unit of measure

Symbol

at least

less than

Collector cutoff current (VCB=15 V), µA

ICBO

0.2

Emitter cutoff current (VEB=5 V), µA

IEBO

0.5

Leakage current between transistors (VT1T2=20 V), µA

IТ1Т2O

0.1

Static forward current transfer ratio (VCB=1 V,IE=1 mA, tP=2 ms, f ≤50 Hz)

h21E1,2

40

200

Ratio of static forward current gains ( (VCB=1 V,IE=1 mA, tP=2 ms, f=50 Hz)

h21E1/ h21E2

0.9

Modulus of the emitter-base DC voltage difference (VCB=5V, IE=1 mA), mV

?VEB1- VEB2?

3

Modulus of forward-current transfer ratios on high-frequency (VCB=1 V, IE=1mA, f=100 MHz)

|h21E1,2|

6

Collector-emitter saturation voltage (IC=10 mA, IB=1mA),V

VCE(sat)

0.6

Feedback circuit time constant on high-frequency (VCB=5V, IE=3mA, f=30 MHz), ps

τK

80

Collector junction capacity (VCB=5 V, f=5-10 MHz), pF

CC

2.5

Emitter junction capacity (VCB=0 V, f=5-10 MHz), pF

CE

2.5

Limiting Operational Values

Parameter, unit of measure

Symbol

Value

Maximum continuous collector-base voltage (at REB ≤ 15 kOhm),V

VCBmax

15

Maximum continuous collector-emitter voltage, V

VCEOmax

15

Maximum continuous emitter-base voltage, V

VEBmax

5

Maximum collector direct current, mA

ICmax

20

Collector pulse current at tP ≤ 10 µs, Q ³2.5, mA

ICPmax

50

Constant collector power dissipation (total of both transistors), mW

at T≤+550C

at T=+850C

PCmax

300

120

Junction temperature,0C

TJ

175

Junction-to-ambient thermal resistance,0C/W

RθJA

400

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