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MP101B

Silicon n-p-n transistor

Main parameters

Collector maximum power dissipation, W

0.1

Base-to-collector peak voltage, V

20

Collector-to-emitter peak voltage, V

20

Emitter-to-base peak voltage, V

20

Collector peak current, A

0.1

p-n junction maximum temperature, oC

100

Beta cutoff, MHz

0.5

Collector capacitance, pF

150

Static forward current transfer ratio

15

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