MP104
Low-frequency amplifying p-n-p silicon alloy transistor with unnormalized noise ratio.
Designed for low-frequency signal amplification.
Case type: KTYu-3-6, metal-glass with flexible terminals
Transistor type is marked on case side.
Mass not more than 2 g.
Technical parameters
| Maximum allowedcollector constant current, mA | 10 | |
| Maximum allowed collector impulse current, mA | 50 | |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V | 60 | |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 60 | |
| Maximum emitter-to-base voltage at zero collector current, V | 30 | |
| Maximum collector power dissipation, mW | 150 | |
| Static current transfer coefficient | >9 | |
| Beta cutoff, MHz | >0.1 | |
| Maximum junction temperature, oC | +150 | |
| Ambient air temperature, oC | -60..+125 |
