Low-frequency amplifying silicon alloy p-n-p transistor with unstandardized noise factor.
Case type: metal-glass with flexible terminals. Transistor type is marked on the case side.
Mass not more than 2 g.
Case type KTYu-3-6
Main parameters (at junction temperature +25 oC)
| Maximum allowed constant collector current, mA | 10 |
| Maximum allowed impulse collector current, mA | 50 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V | 30 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 30 |
| Maximum emitter-to base voltage at zero collector current, V | 15 |
| Collector power dissipation, mW | 150 |
| Static current transfer coefficient | 9..45 |
| Beta cutoff, MHz | >0.1 |
| Maximum junction temperature, oC | 150 |
| Ambient air temperature, oC | -60..+125 |
