Transistors
Transistors MP14A are germanium, alloy-type, switching, low frequency, low wattage with p-n-p structure.
Transistors are designed for amplifying of small signals of low frequency, amplifying, switching, application in ferri-transistor cells.
Transistors are produced in metal-glass casing with flexible leads.
Transistor weight, maximum 2g.
Technical conditions: SB0.336.007 ТU1.
Basic technical characteristics of transistors MP14A:
• transistor structure: p-n-p
• Рk max – constant dissipated power of collector: 150 mW;
• fh21б– maximum frequency of current conducting coefficient for common emitter and common base circuits: minimum 1 МHz;
• Ukbоdis – discharge voltage collector-base at given reverse current of collector and open circuit of emitter: 30 V;
• Uebоdis - discharge voltage emitter-base at given reverse current of emitter and open circuit of collector: 30 V;
• Ik and max – maximum pulse current of collector: 20 mА;
• Ikbо– reverse current of collector: maximum 200 mcА;
• h21e – static coefficient of current transmitting of transistor in small signal mode for common emitter and common base circuits correspondingly: 20…40;
• Cc – collector junction capacitance: maximum 50 pF.
Technical characteristics of transistors MP14, MP14A, MP14B:
| Transistor type | Structure | Maximum values of parameters at Tp=25°С | Parameters values at Tp=25°С | |||||||||
| IK. max. | IK. i. max. | UKEОmax. | UEBОmax | РK. max. | h21E | Ukb | Ie | Uke sat. | IkbО | fl | ||
| mА | mА | V | V | mW | V | mА | V | mcА | МHz | |||
| MP14 | p-n-p | 20 | 150 | 15 | 15 | 150 | 20…40 | 5 | 1 | - | 200 | 1 |
| MP14A | p-n-p | 20 | 150 | 30 | 30 | 150 | 20…40 | 5 | 1 | - | 200 | 1 |
| MP14B | p-n-p | 20 | 150 | 30 | 30 | 150 | 30…60 | 5 | 1 | - | 200 | 1 |
