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MP26B

MP26B

Universal low-frequency germanium alloy p-n-p transistor. Transistor is suitable for low-frequency signal amplification and switching.

Case type: metal-glass with flexible terminals, KTYu-3-6. Device type is indicated on the side of the case.

Mass not more than 2 g.

Technical requirement version PZh0.336.004 TU

Technical parameters (at junction temperature +25 oC)

Maximum allowed constant collector current, mA

150

Maximum allowed impulse collector current, mA

400

Maximum collector-to-emitter voltage at given emitter-to-base circuit resistance, V

70

Maximum emitter-to-base current at zero collector current, V

70

Maximum allowed collector power dissipation, mW

200

Static current transfer coefficient

30..80

Collector-to-base voltage, V

35

Emitter current, mA

1.5

Collector reverse current, mkA

75

Beta cutoff, MHz

0.5


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