MP26B
Universal low-frequency germanium alloy p-n-p transistor. Transistor is suitable for low-frequency signal amplification and switching.
Case type: metal-glass with flexible terminals, KTYu-3-6. Device type is indicated on the side of the case.
Mass not more than 2 g.
Technical requirement version PZh0.336.004 TU
Technical parameters (at junction temperature +25 oC)
| Maximum allowed constant collector current, mA | 150 |
| Maximum allowed impulse collector current, mA | 400 |
| Maximum collector-to-emitter voltage at given emitter-to-base circuit resistance, V | 70 |
| Maximum emitter-to-base current at zero collector current, V | 70 |
| Maximum allowed collector power dissipation, mW | 200 |
| Static current transfer coefficient | 30..80 |
| Collector-to-base voltage, V | 35 |
| Emitter current, mA | 1.5 |
| Collector reverse current, mkA | 75 |
| Beta cutoff, MHz | 0.5 |
