MP41A
Low-frequency germanium alloy p-n-p amplifyingtransistorwith non-standardized noise ratio. Transistor is suitable for low-frequency signal amplification.
Case type: metal-glass with flexible terminals, KTYu-3-6. Device type is indicated on the side of the case.
Mass not more than 2 g.
Technical requirement version aA0.336.635TU
Technical parameters (at junction temperature +25 oC)
| Maximum allowed constant collector current, mA | 30 |
| Maximum allowed impulse collector current, mA | 150 |
| Maximum collector-to-emitter voltage at given emitter-to-base circuit resistance, V | 15 |
| Maximum emitter-to-base current at zero collector current, V | 10 |
| Maximum allowed collector power dissipation, mW | 150 |
| Static current transfer coefficient | 50..100 |
| Collector-to-base voltage, V | 5 |
| Emitter current, mA | 1 |
| Collector reverse current, mkA | 15 |
| Beta cutoff, MHz | 1 |
