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MP37A

Germanium, alloy-type, low frequency, low power with n-p-n structure.
Transistors are designed for amplifying of small signals of low frequency.
Transistors are produced in metal-glass casing with flexible leads.

Basic technical characteristics
• transistor structure: p-n-p
• Рk max – constant dissipated power of collector:
• fh21б– maximum frequency of current conducting coefficient for common emitter and common base circuits:
• Ukbоdis – discharge voltage collector-base at given reverse current of collector and open circuit of emitter:
• Uebоdis - discharge voltage emitter-base at given reverse current of emitter and open circuit of collector:
• Ik and max – maximum pulse current of collector:
• Ikbо– reverse current of collector:
• h21e – static coefficient of current transmitting of transistor in small signal mode for common emitter and common base circuits correspondingly

Technical characteristics

Transistor type

Structure

Maximum values of parameters at Tp=25°С

Parameters values at Tp=25°С

IK. max.

IK. i. max.

UKEОmax.

UEBОmax

РK. max.

h21E

Ukb

Ie

Uke sat.

IkbО

fl

V

V

mW

V

V

МHz

MP37

n-p-n

20

150

15

15

150

15…30

5

1

-

30

1

MP37A

n-p-n

20

150

30

30

150

15…30

5

1

-

30

1

MP37B

n-p-n

20

150

30

30

150

25…50

5

1

-

30

1

You can order MP37A from us

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