2T602B

Transistors – silicon planar with n-p-n structure.

Transistors are designed for generating and amplifying signals.
Transistors 2Т602А, 2Т602B are produced in metal-glass casing with flexible lead-outs.
Transistor weight - maximum 5 g.

Basic technical characteristics of transistors 2Т602B:
• Transistor structure: n-p-n;
• Рc max – Constant dissipated power of collector: 0,85 Vt;
• Рc p max – Maximum pulse dissipated power of collector: 2,8 Vt;
• fgr – Limit frequency of current transmitting coefficient for circuits with common emitter: minimum 150 MHz;
• Ucbo max – Maximum voltage collector-base at given reverse current of collector and open current of emitter: 120 V;
• Uebo max – Maximum voltage emitter-base at given reverse current of emitter and open circuit of collector: 5 V;
• Ic max – Maximum direct current of collector: 75 mA;
• Ic p max – Maximum pulse current of collector: 500 mA;
• Icbo – Collector reverse current: maximum 70 mcA;
• h21e – Static coefficient of current transmitting of transistor for circuits with common emitter: 20... 80;
• Сc – Capacitance of collector junction: maximum 4 pF;
• Rce sat – Saturation resistance between collector and emitter: maximum 4 Om;
• tc – Response time of feedback circuit at high frequency: maximum 300 ps

Technical characteristics of transistors 2Т602А, 2Т602B: