| General-purpose silicon epitaxial-planar NPN transistors. |
| Technical specifications: |
| Transistor type: bipolar |
| · Structure: NPN |
| · Material: silicon; epitaxial-planar technology |
| · Application: general-purpose; for high-frequency amplifiers and oscillators |
| · Collector-base voltage (VCBO): 120 V |
| · Emitter-base voltage (VEBO): 5 V |
| · Maximum continuous collector current (IC): 100 mA |
| · Maximum pulse collector current: 350 mA |
| · Maximum collector power dissipation (PC): 500 mW |
| · Transition frequency (fT): not less than 200 MHz |
| · DC current gain (h21E): 50–350 (depending on group); for the 2T638A version: minimum 200 |
| · Collector junction capacitance: maximum 8 pF |
| · Collector reverse current: maximum 0.1 mA |
| · Package: KT-2-7 (metal-glass, with flexible leads) |
| · Weight: maximum 1.5 g |
