2T836B

Transistors

Silicon planar switching transistors with p-n-p structure.
Transistors are designed for application in switching devices, power amplifiers and secondary power suppliers.
Transistors 2Т836А, 2Т836B, 2Т836V, 2Т836G are produced in metal case with glass isolators and flexible leads.
Transistor maximum weight 2 g.
Case type: KT-2 (ТО-39).

Basic technical characteristics of transistors 2Т836B:
• Transistor structure: p-n-p;
• Рc тmax – Constant dissipated power of collector with heatsink: 5 Vt;
• fgr – Limit frequency of current transmitting coefficient of transistor for circuit with common emitter: minimum 4 MHz;
• Ucbоmax – Maximum voltage collector-base at given reverse current of collector and open circuit of emitter: 90 V;
• Uebоmax – Maximum voltage emitter-base at given reverse current of emitter and open circuit of collector: 5 V;
• Ic max – Maximum direct current of collector: 3 А;
• Icbо– Reverse current of collector: maximum 100 mcА(300V);
• h21e – Static coefficient of transistor current transmitting for circuits with common emitter: 20... 100;
• Rce sat – Saturation resistance between collector and emitter: maximum 0,3 Om

Technical characteristics of transistors 2Т836А, 2Т836B, 2Т836V, 2Т836G, 2Т836А-5: