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2T908A

2T908A

Switching silicon mesaplanar n-p-n transistor for voltage regulators, converters and pulse modulators.

Case type: metal with glass insulators and hard terminals, type KTYu-3-20

Mass without cap flange not more than 22 g, mass of cap flange not more than 12 g

Technical requirement version Ge3.356.007 TU

Technical parameters

Maximum allowed constant collector current, A

10

Maximum allowed constant collector-to-emitter voltage at given base-to-emitter circuit resistance, V

100

Maximum allowed collector-to-base voltage at zero emitter current, V

140

Maximum allowed emitter-to-base voltage at zero collector current, V

5

Maximum allowed collector power dissipation, W

50

Static current transfer coefficient

8..60

Collector-to-emitter saturation voltage, V

<1.5

Collector-to-emitter reverse current, mA

<25

Beta cutoff, MHz

>50

Maximum allowed junction temperature, oC

+150

Ambient air temperature, oC

-60..+125


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