2T908A
Switching silicon mesaplanar n-p-n transistor for voltage regulators, converters and pulse modulators.
Case type: metal with glass insulators and hard terminals, type KTYu-3-20
Mass without cap flange not more than 22 g, mass of cap flange not more than 12 g
Technical requirement version Ge3.356.007 TU
Technical parameters
| Maximum allowed constant collector current, A | 10 |
| Maximum allowed constant collector-to-emitter voltage at given base-to-emitter circuit resistance, V | 100 |
| Maximum allowed collector-to-base voltage at zero emitter current, V | 140 |
| Maximum allowed emitter-to-base voltage at zero collector current, V | 5 |
| Maximum allowed collector power dissipation, W | 50 |
| Static current transfer coefficient | 8..60 |
| Collector-to-emitter saturation voltage, V | <1.5 |
| Collector-to-emitter reverse current, mA | <25 |
| Beta cutoff, MHz | >50 |
| Maximum allowed junction temperature, oC | +150 |
| Ambient air temperature, oC | -60..+125 |
