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2T914A

2T914A

Silicon epitaxial passivated p-n-p generating transistor for power amplifiers, frequency multipliers, self-oscillators with frequencies up to 400 MHz at power supply voltage 28 V.

Case type: metal-ceramic with hard terminals and mounting screw, KT-4-2

Mass not more than 6 g.

Structure

p-n-p

Maximum allowed collector constant current, A

0.8

Maximum allowed collector impulse current, A

1.5

Maximum collector-to-emitter constant voltage at given collector current an base-to-emitter circuit resistance, V

65

Maximum constant emitter-to-base voltage at zero collector current, V

4

Maximum allowed power supply voltage, V

28

Maximum collector power dissipation, W

7

Static current transfer coefficient

10..60

Collector-to-emitter saturation voltage. V

<0.6

Collector reverse current, mA

<2

Emitter reverse current, mA

<0.1

Beta cutoff, MHz

350

Output power, W

>7.2

Power gain ratio, dB

>7.2

Collector junction capacitance, not more than, pF

12

Collector-to-emitter saturation resistance, not more than, Ohm

12

Feedback circuit time constant at high frequency, not more than, ps

20

Maximum junction temperature, oC

150

Ambient air temperature, oC

-60..+125

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