2T914A
Silicon epitaxial passivated p-n-p generating transistor for power amplifiers, frequency multipliers, self-oscillators with frequencies up to 400 MHz at power supply voltage 28 V.
Case type: metal-ceramic with hard terminals and mounting screw, KT-4-2
Mass not more than 6 g.
| Structure | p-n-p |
| Maximum allowed collector constant current, A | 0.8 |
| Maximum allowed collector impulse current, A | 1.5 |
| Maximum collector-to-emitter constant voltage at given collector current an base-to-emitter circuit resistance, V | 65 |
| Maximum constant emitter-to-base voltage at zero collector current, V | 4 |
| Maximum allowed power supply voltage, V | 28 |
| Maximum collector power dissipation, W | 7 |
| Static current transfer coefficient | 10..60 |
| Collector-to-emitter saturation voltage. V | <0.6 |
| Collector reverse current, mA | <2 |
| Emitter reverse current, mA | <0.1 |
| Beta cutoff, MHz | 350 |
| Output power, W | >7.2 |
| Power gain ratio, dB | >7.2 |
| Collector junction capacitance, not more than, pF | 12 |
| Collector-to-emitter saturation resistance, not more than, Ohm | 12 |
| Feedback circuit time constant at high frequency, not more than, ps | 20 |
| Maximum junction temperature, oC | 150 |
| Ambient air temperature, oC | -60..+125 |
