The 2T912A silicon epitaxial-planar n-p-n transistors are designed for use in linear power amplifiers at frequencies of 1.5 ... 30 MHz at a supply voltage of 27 V. 2T912A and 2T912B transistors are manufactured in a metal-ceramic casing with rigid terminals and a mounting screw. There is a semiconductor diode temperature sensor inside the casing. The type of the device is indicated on the housing. The transistor weight in the metal-ceramic casing is not more than 45 grams, the crystal is not more than 0.01 g. Body type: КТ-5 (ТО-63).
The main technical characteristics of the transistor 2T912A:
| Structure of the transistor | n-p-n |
| Maximum collector power dissipation (with heatsink) | 30 W |
| Transition frequency | more than 90 MHz |
| Maximum collector-emitter voltage | 70 V |
| Maximum emitter-base voltage | 5 V |
| Maximum permissible constant collector current | 20 A |
| Collector-emitter reverse current | not more than 50 mA (70V); |
| Static transistor current transfer ratio for circuits with common emitter | 10 ... 50 |
| Collector junction capacity | not more than 200 pF |
| Power gain | not less than 10 dB |
| Transistor output power | at least 70 W at 30 MHz |
