MP37

Germanium, alloy-type, low frequency, low power with n-p-n structure.
Transistors are designed for amplifying of small signals of low frequency.
Transistors are produced in metal-glass casing with flexible leads.

Basic technical characteristics
• transistor structure: p-n-p
• Рk max – constant dissipated power of collector:
• fh21б– maximum frequency of current conducting coefficient for common emitter and common base circuits:
• Ukbоdis – discharge voltage collector-base at given reverse current of collector and open circuit of emitter:
• Uebоdis - discharge voltage emitter-base at given reverse current of emitter and open circuit of collector:
• Ik and max – maximum pulse current of collector:
• Ikbо– reverse current of collector:
• h21e – static coefficient of current transmitting of transistor in small signal mode for common emitter and common base circuits correspondingly

Technical characteristics