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2T506A

Switching n-p-n planar silicon transistor for use in switching devices, impulse modulators, convertors, linear voltage stabilizers

Case type: KT-2-7(TO-39), metal with flexible terminals and glass insulators.

Mass not more than 2.0 g.

Lifetime: 25000 h in all modes, 40000 in light mode

Technical parameters (at junction temperature 25 oC)

Maximum allowed collector constant current, A

2

Maximum allowed collector impulse current, A

5

Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V

800

Maximum collector-to-base voltage at given collector current and zero emitter current, V

800

Maximum emitter-to-base voltage at zero collector current, V

5

Maximum allowed collector power dissipation, W

0.8

Maximum allowed collector power dissipation (with a heatsink), W

10

Static current transfer coefficient


>30

Collector-to-emitter saturation voltage, V

0.6

Collector reverse current, mA

1

Emitter reverse current, mA

1

Beta cutoff, MHz

10

Collector junction capacitance, pF

40

Emitter junction capacitance, pF

1100

Maximum allowed junction temperature, oC

150

Ambient air temperature, oC

-60..+125

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