Switching n-p-n planar silicon transistor for use in switching devices, impulse modulators, convertors, linear voltage stabilizers
Case type: KT-2-7(TO-39), metal with flexible terminals and glass insulators.
Mass not more than 2.0 g.
Lifetime: 25000 h in all modes, 40000 in light mode
Technical parameters (at junction temperature 25 oC)
| Maximum allowed collector constant current, A | 2 |
| Maximum allowed collector impulse current, A | 5 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V | 800 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 800 |
| Maximum emitter-to-base voltage at zero collector current, V | 5 |
| Maximum allowed collector power dissipation, W | 0.8 |
| Maximum allowed collector power dissipation (with a heatsink), W | 10 |
| Static current transfer coefficient | |
| Collector-to-emitter saturation voltage, V | 0.6 |
| Collector reverse current, mA | 1 |
| Emitter reverse current, mA | 1 |
| Beta cutoff, MHz | 10 |
| Collector junction capacitance, pF | 40 |
| Emitter junction capacitance, pF | 1100 |
| Maximum allowed junction temperature, oC | 150 |
| Ambient air temperature, oC | -60..+125 |
