Transistors – silicon planar with n-p-n structure.
Transistors are designed for generating and amplifying signals.
Transistors 2Т602А, 2Т602B are produced in metal-glass casing with flexible lead-outs.
Transistor weight - maximum 5 g.
Basic technical characteristics of transistors 2Т602А:
• Transistor structure: n-p-n;
• Рc max – Constant dissipated power of collector: 0,85 Vt;
• Рc p max – Maximum pulse dissipated power of collector: 2,8 Vt;
• fgr – Limit frequency of current transmitting coefficient for circuits with common emitter: minimum 150 MHz;
• Ucbo max – Maximum voltage collector-base at given reverse current of collector and open current of emitter: 120 V;
• Uebo max – Maximum voltage emitter-base at given reverse current of emitter and open circuit of collector: 5 V;
• Ic max – Maximum direct current of collector: 75 mA;
• Ic p max – Maximum pulse current of collector: 500 mA;
• Icbo – Collector reverse current: maximum 70 mcA;
• h21e – Static coefficient of current transmitting of transistor for circuits with common emitter: 20... 80;
• Сc – Capacitance of collector junction: maximum 4 pF;
• Rce sat – Saturation resistance between collector and emitter: maximum 4 Om;
• tc – Response time of feedback circuit at high frequency: maximum 300 ps
Technical characteristics of transistors 2Т602А, 2Т602B:
Transistor type | Structure | Maximum values of parameters at Тp=25°С | Values of parameters at Тp=25°С | Tp | Т | ||||||||||||
Ic | Ic. p. | Uce R max | Ucb0 max | Ueb0 max | Рcmax | h21e | Uce sat | IcbО | IebО | IceR | f gr. | Сc | Сe | ||||
mA | mA | V | V | V | Vt | V | mcА | mcА | mcА | MHz | pF | pF | °С | °С | |||
2Т602А | n-p-n | 75 | 500 | 100 | 120 | 5 | 0,85 (2,8) | 20…80 | <3 | <10 | <50 | <10 | >150 | <4 | <25 | 150 | -60…+125 |
2Т602B | n-p-n | 75 | 500 | 100 | 120 | 5 | 0,85 (2,8) | 50…200 | <3 | <10 | <50 | <10 | >150 | <4 | <25 | 150 | -60…+125 |